A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology

• 作者: 张兴 张立忠 曹健 王源 陆光易
• 来源期刊: 中国物理B（英文版）
• 关键词: electrostatic discharge (ESD) gated-PiN junction diode string parasitic resistance redistribution
• 年，卷（期）: 2015,（10）
• 页码范围: 108503-1-108503-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/10/108503

摘要

A novel diode string-triggered gated-PiN junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor (CMOS) technology, is proposed in this paper. An embedded gated-PiN junction structure is employed to reduce the diode string leakage current to 13 nA/μm in a temperature range from 25?C to 85?C. To provide the effective electrostatic discharge (ESD) protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number.