Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

• 作者: 冯志红 周幸叶 宋旭波 王元刚 蔡树军 顾国栋
• 来源期刊: 中国物理B（英文版）
• 关键词: transient simulation AlGaN/GaN HEMT current collapse trapping effect
• 年，卷（期）: 2015,（4）
• 页码范围: 048503-1-048503-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/4/048503

摘要

In this paper, two-dimensional (2D) transient simulations of an AlGaN/GaN high-electron-mobility transistor (HEMT) are carried out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases are obtained, and the pulsed current–voltage (I–V ) curves are extracted from the transients. The experi-mental results of both gate-lag transient current and pulsed I–V curves are reproduced by the simulation, and the current collapse due to the trapping effect is explained from the view of physics based on the simulation results. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of AlGaN/GaN HEMTs besides surface traps and that the thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simu-lation is meaningful in analyzing the mechanism of dynamic current collapse, and the work in this paper will benefit the reliability study and model development of GaN-based devices.