Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

• 作者: 史敬元 张大勇 彭松昂 毛达诚 王少青 王选芸 金智
• 来源期刊: 中国物理B（英文版）
• 关键词: graphene field effect transistor contact resistance
• 年，卷（期）: 2016,（7）
• 页码范围: 078103-1-078103-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/25/7/078103

摘要

Reducing the contact resistance without degrading the mobility property is crucial to achieve high-performance graphene field effect transistors. Also, the idea of modifying the graphene surface by etching away the deposited metal provides a new angle to achieve this goal. We exploit this idea by providing a new process method which reduces the contact resistance from 597?· μm to sub 200?· μm while no degradation of mobility is observed in the devices. This simple process method avoids the drawbacks of uncontrollability, ineffectiveness, and trade-off with mobility which often exist in the previously proposed methods.