Improving breakdown voltage performance of SOI power device with folded drift region

• 作者: 李海鸥 李琦 杨年炯 肖功利 黄平奖
• 来源期刊: 中国物理B（英文版）
• 关键词: interlaced dielectric trenches folded drift region breakdown voltage N/P pillars
• 年，卷（期）: 2016,（7）
• 页码范围: 077201-1-077201-6
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/25/7/077201

摘要

A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200%in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V.