TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing

• 作者: Atsushi Moriya Junji Yamanaka Keisuke Arimoto Kentarou Sawano Kiyokazu Nakagawa Shigenori Inoue Yasuhiro Inokuchi Yasuhiro Shiraki Yasuo Kunii
• 来源期刊: 材料科学与化学工程(英文)
• 学科: 医学
• 关键词: STRAINED Heterodevice Silicon-Carbon Alloy Ion IMPLANTATION Transmission Electron MICROSCOPY
• 年，卷（期）: clkxyhxgcyw_2017,（1）
• 页码范围: 15-25
• 页数: 11页
• 分类号: R73

摘要

Strained Si and its related materials, such as strained SiGe and strained silicon-carbon alloy (Si-C), are receiving tremendous interest due to their high carrier mobility. In this study we carry out a basic investigation of the change in microstructure of ion-implanted Si-C solid solution caused by rapid thermal annealing, because it is very important to realize a field-effect transistor made of this new material. The microstructures of arsenic-ion-, boron-ion-, and silicon-ion-implanted Si0.99C0.01 specimens upon thermal annealing are observed using transmission electron microscopy, and it is revealed that the rate of solid-state crystallization of ion-implanted Si-C is slower than that of the ion-implanted Si.