Fabrication and Characterization of PLD-Grown Bismuth Telluride (Bi<sub>2</sub>Te<sub>3</sub>) and Antimony Telluride (Sb<sub>2</sub>Te<sub>3</sub>) Thermoelectric Devices

• 作者: Ibrahim M. Abdel-Motaleb Syed M. Qadri
• 来源期刊: 电子器件冷却与温度控制期刊(英文)
• 学科: 工学
• 关键词: Thermoelectric Devices Bismuth TELLURIDE Bi2Te3 ANTIMONY TELLURIDE Sb2Te3 Pulsed Laser Deposition PLD SEEBECK Effect
• 年，卷（期）: 2017,（3）
• 页码范围: 63-77
• 页数: 15页
• 分类号: TB3

摘要

We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using Pulsed Laser Deposition (PLD). The SiO2 layer was used to provide insulation between the devices and the Si wafer. Copper was used as an electrical connector and a contact for the junctions. Four devices were built, where the Bi2Te3 and Sb2Te3 were deposited at substrate temperatures of 100°C, 200°C, 300°C and 400°C. The results show that the device has a voltage sensitivity of up to 146 μV/K and temperature sensitivity of 6.8 K/mV.