Base Doping Effects on the Efficiency of Vertical Parallel Junction Solar Cells

• 作者: Aboubaker Chedikh Beye Almoustapha Samoura Omar Faye Oumar Sakho
• 来源期刊: 应用科学(英文)
• 学科: 工学
• 关键词: VERTICAL JUNCTION DOPING INTERNAL Quantum EFFICIENCY (IQE)
• 年，卷（期）: 2017,（6）
• 页码范围: 282-290
• 页数: 9页
• 分类号: TN3

摘要

In this work, we present a theoretical study of a vertical parallel junction silicon solar cell under monochromatic illumination. The internal quantum efficiency (IQE) and the photovoltaic conversion efficiency are calculated, taking into account the base doping density and illumination wave-length. The main purpose of this work is to show how conversion efficiency depends on internal quantum efficiency and the dependence of the later on the base doping density.