Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates

• 来源期刊: 中国物理快报（英文版）
• 关键词: @@
• 年，卷（期）: 2017,（9）
• 页码范围: 95-99
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/0256-307X/34/9/097304

摘要

A novel high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated.The memory capacitor exhibits excellent program-erasable characteristics.A large memory window of ～4 V,a small leakage current density of ～2 × 10-6 Acm 2 at a gate voltage of 7V,a high charge trapping density of 1.42 × 1013 cm-2 at a working voltage of ±10 V and good retention characteristics are observed.Furthermore,the programming (A VFB =2.8 V at 10 V for 10μs) and erasing speeds (AVFB =-1.7 V at-10 V for 10μs) of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier.It is concluded that the high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.