Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures

• 来源期刊: 中国物理快报（英文版）
• 关键词: @@
• 年，卷（期）: 2017,（12）
• 页码范围: 75-78
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/34/12/128501

摘要

Superior characteristics of AlGaN-channel metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) at high temperatures are demonstrated in detail.The temperature coefficient of the maximum saturation drain current for the A1GaN-channel MIS HEMT can be reduced by 50％ compared with the GaN-channel HEMT.Moreover,benefiting from the better suppression of gate current and reduced leakage current in the buffer layer,the AIGaN-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV/cm at 25℃ and 1.06 MV/cm at 300℃,which is almost 2 times and 3 times respectively larger than that of the reference GaN-channel HEMT.Pulsed mode analyses suggest that the proposed device suffers from smaller current collapse when the temperature reaches as high as 300℃.