The effect of Bi composition on the electrical properties of InP1-xBix

• 来源期刊: 中国科学:物理学 力学 天文学（英文版）
• 年，卷（期）: 2017,（4）
• 页码范围: 82-85
• 页数: 4页
• 语种: 中文
• DOI: 10.1007/s11433-016-0423-3

摘要

Ⅲ-Ⅴ Semiconductors containing a small amount of Bi,known as dilute bismides,have attracted great interest in recent years,due to the large band-gap reduction and other unique properties [1,2].Previous studies have been primarily focused on the growth and optical properties of the GaAs-based bismuthides [3],while the properties of other dilute bismides are less well understood.Berding et al.