Aggregation-induced delayed fluorescence (AIDF) materials: a new break-through for nondoped OLEDs
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摘要:
Nowadays,purely organic materials with delayed fluorescence (DF) are being enthusiastically developed and extensively utilized as light-emitting materials to fabricate OLEDs because of their high exciton utilization and metal-free nature.These DF materials usually have a small single-triplet splitting (AEsr),and the nonradiative triplet excitons (75%)can be converted into radiative singlet excitons via thermally promoted reverse intersystem crossing (RISC) processes,endowing their OLEDs with potential internal quantum efficiencies (IQEs) approaching 100%.Although many OLEDs based on conventional DF emitters have high efficiencies and high maximum brightness,they usually have to face two practical obstacles which frustrate their commercial applications:namely,complicated device architectures with a host-guest doping system as the emitting layer,and serious efficiency roll-off at high luminance.