Solid state reaction for the formation of spinel MgFe2O4 across perovskite oxide interface

• 来源期刊: 中国科学:物理学 力学 天文学（英文版）
• 年，卷（期）: 2017,（9）
• 页码范围: 80-84
• 页数: 5页
• 语种: 英文
• DOI: 10.1007/s11433-017-9064-0

摘要

Solid state reaction is a conventional method to synthesize structurally stable inorganic solids by mixing powdered reactants together at high pressure (over 1 × l05 mbar (1 mbar =100 Pa)) and high temperature (over 1300 K) [1-4].This method is effective and sophisticated to prepare solid materials,especially the functional complex oxides such as high temperature superconductors,piezoelectrics,dielectrics,etc.However,the chemical reactions cannot be intrinsically controlled and integrated at an atomic level in order to achieve the applications of future thin film devices with reduced dimensions [5].With the desire of designing high-quality products with the micro/nanoscale integration,many powerful physical techniques,such as,pulsed-laser deposition (PLD),molecular beam epitaxy (MBE),sputtering deposition,etc.,have experienced enormous development due to their ability of lattice and/or interfacial controls.Using these growth techniques,layer-by-layer deposition (multilayer and/or superlattice) can be achieved,providing us a platform to tune the crystal structures at an atomic level by controlling the interfacial terminations and epitaxial strain,which are absent in their bulk counterparts [6-8].From this point of view,well-controlled interfacial structures may also provide the solid state reaction at an atomic level during the physical depositions,which provides us an effective way to design the desired products from the chemical bonding reconstruction.