Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

• 来源期刊: 材料科学技术（英文版）
• 年，卷（期）: 2017,（8）
• 页码范围: 901-906
• 页数: 6页
• 语种: 英文

摘要

In the current work,in situ surface passivation Ge substrate by using trimetbylaluminum (TMA) prior to HfTiO films deposition and electrical properties of HfriO/Ge gate stacks have been investigated by X-ray photoelectron spectroscopy (XPS) and electrical measurements systematically.Based on analysis from XPS measurements,it has been confirmed that the interfacial layer of HfTiO/Ge gate stack has been suppressed effectively after 20 half-ALD cycles TMA pretreatment.Electrical properties of metal-oxidesemiconductor (MOS) capacitor based on HfTiO gate dielectrics have shown that the MOS capacitor with 20 cycles TMA cleaning exhibits the lowest interface state density (～7.56eV-1cm 2) and the smallest leakage current (～2.67 × 10-5 A/cm2).Correspondingly,the leakage current conduction mechanisms for MOS capacitor device with 20 cycles TMA cleaning also have been discussed in detail.