Enabling novel device functions with black phosphorus/MoS2 van der Waals heterostructures

• 来源期刊: 科学通报（英文版）
• 年，卷（期）: 2017,（23）
• 页码范围: 1557-1558
• 页数: 2页
• 语种: 英文

摘要

Van der Waals heterostructure,which consists of various twodimensional (2D) layered materials stacked along the direction perpendicular to their 2D plane,has emerged as a promising material system for device applications in recent years [1].Due to the weak van der Waals interlayer force,2D layered materials with very different lattice constants can be stacked without being constrained by the traditional "lattice-match" condition to form high quality heterostructures [2].Moreover,the wide range of available 2D layered materials including insulators,semiconductors,metals and superconductors[1],allow for the construction of heterostructures combining 2D layers with very different physical properties.Up to now,several functional electronic and optoelectronic devices based on van der Waals heterostructures have been demonstrated,including tunneling field-effect transistors (FETs) [3],vertical FETs [4],and light emitting diodes [5].