Performance of dual-band short-or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices

• 来源期刊: 中国物理B（英文版）
• 关键词: short-/mid-wavelength InGaAsSb InAs/GaSb
• 年，卷（期）: 2017,（9）
• 页码范围: 526-529
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/1674-1056/26/9/098506

摘要

In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21 Sb0.79 bulk materials and InAs/GaSb type-Ⅱ supedattices with cutoff wavelengths of 2.2 μm and 3.6 μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42％ and a dark current density of 5.93 × 10-5 A/cm2 at 500 mV,thereby providing a detectivity of 1.55 × 1011 cm.Hz1/2/W.The mid-wave channel exhibits a peak quantum efficiency of 31％ and a dark current density of 1.22 × 10-3 A/cm2 at-300 mV,thereby resulting in a detectivity of 2.71 × 1010 cm.Hz1/2/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.