The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates

• 来源期刊: 中国物理快报（英文版）
• 关键词: @@
• 年，卷（期）: 2017,（6）
• 页码范围: 84-86
• 页数: 3页
• 语种: 英文
• DOI: 10.1088/0256-307X/34/6/067201

摘要

We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma (ICP).By fabricating a multilayer-graphene field-effect transistor on a Si/SiO2 substrate,we obtain that the superlinearity results from the interaction between the multilayer graphene sheet and the ICP-etched silicon.In addition,the observed superlinear transport of the device is found to be consistent with the prediction of Schwinger's mechanism.In the high bias regime,the values of α increase dramatically from 1.02 to 1.40.The strength of the electric field corresponding to the on-start of electronhole pair production is calculated to be 5 × 104 V/m.Our work provides an experimental observation of the nonlinear transport of the multilayer graphene.