Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer

• 来源期刊: 中国物理B（英文版）
• 关键词: AlGaN time-resolved photoluminescence localized excitons
• 年，卷（期）: 2017,（7）
• 页码范围: 399-402
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/1674-1056/26/7/077802

摘要

AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL).An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed,and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K.We demonstrated that these behaviors are caused by a change in the carder dynamics with increasing temperature due to the competition of carders' localization and delocalization in the AlGaN alloy.