The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors

• 来源期刊: 中国物理B（英文版）
• 关键词: wide band gap semiconductor p-ZnO Zn3N2 thermal oxidation
• 年，卷（期）: 2017,（11）
• 页码范围: 1-14
• 页数: 14页
• 语种: 英文
• DOI: 10.1088/1674-1056/26/11/117101

摘要

P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices.The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications.In this paper,we introduce an alternative route to stabilizing N in the oxidation process,the thermal stability of p-ZnO is significantly improved.Finally,we discuss the limitations of the alternative doping method and provide some prospective outlook of the method.