Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory

• 来源期刊: 中国物理B（英文版）
• 关键词: ferroelectric random access memory ionizing radiation effect single event upset
• 年，卷（期）: 2017,（9）
• 页码范围: 329-334
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/26/9/096102

摘要

The impact of ionizing radiation effect on single event upset (SEU) sensitivity of ferroelectric random access memory (FRAM) is studied in this work.The test specimens were firstly subjected to 60Co γ-ray and then the SEU evaluation was conducted using 209Bi ions.As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material,the SEU cross sections of the post-irradiated devices shift substantially.Different trends of SEU cross section with elevated dose were also found,depending on whether the same or complementary test pattem was employed during the TID exposure and the SEU measurement.