Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature

• 来源期刊: 中国物理B（英文版）
• 关键词: large single crystal diamond high pressure and high temperature doping electrical property
• 年，卷（期）: 2017,（5）
• 页码范围: 392-397
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/26/5/058102

摘要

A series of diamonds with boron and sulfur co-doping were synthesized in the FeNiMnCo-C system by temperature gradient growth (TGG) under high pressure and high temperature (HPHT).Because of differences in additives,the resulting diamond crystals were colorless,blue-black,or yellow.Their morphologies were slab,tower,or minaret-like.Analysis of the x-ray photoelectron spectra (XPS) of these diamonds shows the presence of B,S,and N in samples from which N was not eliminated.But only the B dopant was assuredly incorporated in the samples from which N was eliminated.Resistivity and Hall mobility were 8.510 Ω·cm and 760.870 cm2/V·s,respectively,for a P-type diamond sample from which nitrogen was eliminated.Correspondingly,resistivity and Hall mobility were 4.211 × 105 Ω·cm and 76.300 cm2/V·s for an N-type diamond sample from which nitrogen was not eliminated.Large N-type diamonds of type Ib with B-S doping were acquired.