Study on the Theoretical Limitation of the Mid-Infrared PbSe N<sup>+</sup>-P Junction Detectors at High Operating Temperature

• 作者: Binbin Weng Jijun Qiu Lance L. McDowell Quang Phan Xinghua Shi Zhihua Cai Zhisheng Shi
• 来源期刊: 检测(英文)
• 学科: 医学
• 关键词: PBSE LIFETIME R0A DETECTIVITY
• 年，卷（期）: jcyw_2018,（1）
• 页码范围: 1-16
• 页数: 16页
• 分类号: R73

摘要

This paper provides a theoretical study and calculation of the specific detectivity-D* limit of photovoltaic (PV) mid-wave infrared (MWIR) PbSe n+-p junction detectors operating at both room temperature and TE-cooled temperature. For a typical PbSe p-type doping concentration of 2 × 1017 cm-3 and with high quantum efficiency, the D* limits of a photovoltaic PbSe n+-p junction detector are shown to be 2.8 × 1010 HZ1/2/W and 3.7 × 1010 HZ1/2/W at 300 K and 240 K, with cut-off wavelength of 4.5 μm and 5.0 μm, respectively. It is almost one magnitude higher than the current practical MWIR PV detector. Above 244 K, the detector is Johnson noise limited, and below 191 K the detector reaches background limited infrared photodetector (BLIP) D*. With optimization of carrier concentration, D* and BLIP temperature could be further increased.