Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering

• 来源期刊: 光：科学与应用（英文版）
• 年，卷（期）: 2018,（4）
• 页码范围: 165-172
• 页数: 8页
• 语种: 英文
• DOI: 10.1038/s41377-018-0016-y

摘要

Carrier diffusion is of paramount importance in many semiconductor devices,such as solar cells,photodetectors,and power electronics.Structural defects prevent such devices from reaching their full performance potential.Although a large carrier diffusion length indicates high material quality,it also implies increased carrier depletion by an individual extended defect (for instance,a dislocation) and obscures the spatial resolution of neighboring defects using optical techniques.For commonly utilized photoluminescence (PL) imaging,the spatial resolution is dictated by the diffusion length rather than by the laser spot size,no matter the spot is at or below the diffraction limit.Here,we show how Raman imaging of the LO phonon-plasmon-coupled mode can be used to recover the intrinsic spatial resolution of the optical system,and we demonstrate the effectiveness of the technique by imaging defects in GaAs with diffraction-limited optics,achieving a 10-fold improvement in resolution.Furthermore,by combining Raman and PL imaging,we can independently and simultaneously determine the spatial dependence of the electron density,hole density,radiative recombination rate,and non-radiative recombination rate near a dislocation-like defect,which has not been possible using other techniques.