Platinum Silicide-Silicon Schottky Diode Characteristics

• 作者: E.A. Kerimov N.F. Kazimov S.I. Huseynova S.N. Musaeva
• 来源期刊: 现代电子技术(英文)
• 学科: 工学
• 关键词: PHOTOELECTRIC MEASUREMENTS additional information TRANSPORTATION mechanism
• 年，卷（期）: 2018,（2）
• 页码范围: 41-43
• 页数: 3页
• 分类号: TN

摘要

Photoelectric measurements are used to obtain additional information on the transportation mechanism of Schottky barrier structures. The main purpose of the study is to investigate the photoelectric properties of Shottky diodes based on PtSi - n - Si and PtSi - p - Si contacts.