Probing defects in ZnO by persistent phosphorescence

• 来源期刊: 光电进展（英文版）
• 年，卷（期）: 2018,（6）
• 页码范围: 8-13
• 页数: 6页
• 语种: 中文
• DOI: 10.29026/oea.2018.180011

摘要

Native point defects in ZnO are so complicated that most of them are still debating issues, although they have been stu-died for decades. In this paper, we experimentaly reveal two sub-components usualy hidden in the low energy tail of the main broad green luminescence band peaking at 547 nm (～2.267 eV) in intentionally undoped ZnO single crystal by se-lecting the below-band-gap (BBG) optical excitations (e.g. light wavelengths of 385 nm and 450 nm). Moreover, both sub-components are manifested as long persistent phosphorescence once the BBG excitations are removed. With the aid of a newly developed model, the energy depths of two electron traps involved within the long lived orange lumines-cence are determined to be 44 meV and 300 meV, respectively. The candidates of these two electron traps are argued to be most likely hydrogen and zinc interstitials in ZnO.