Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes

• 来源期刊: 固体力学学报（英文版）
• 年，卷（期）: 2018,（3）
• 页码范围: 383-390
• 页数: 8页
• 语种: 英文

摘要

The effect of electromechanical fields,i.e.,polarization fields,on the efficiency droop of GaN-based light-emitting diodes is presented using both experimental and numerical analyses.The role of incorporating such polarization charge density in device performance is numerically investigated and further compared with the experimental results of internal quantum efficiency of three different devices in consideration.