Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors

• 来源期刊: 中国物理B（英文版）
• 关键词: temperature mobility two-dimensional electron gas InAs/AlSb HEMT
• 年，卷（期）: 2018,（9）
• 页码范围: 555-561
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/9/097201

摘要

In this report,the effect of temperature on the InAs/AlSb heterojunction and high-electron-mobility transistors(HEMTs)with a gate length of 2 μm are discussed comprehensively.The results indicate that device performance is greatly improved at cryogenic temperatures.It is also observed that the device performance at 90 K is significantly improved with 27％lower gate leakage current,12％higher maximum drain current,and 22.5％higher peak transconductance compared to 300 K.The temperature dependence of mobility and the two-dimensional electron gas concentration in the InAs/AlSb heterojunction for the temperature range 90 K-300 K is also investigated.The electron mobility at 90 K(42560 cm2/V·s)is 2.5 times higher than its value at 300 K(16911 cm2/V·s)because of the weaker lattice vibration and the impurity ioniza-tion at cryogenic temperatures,which corresponds to a reduced scattering rate and higher mobility.We also noted that the two-dimensional electron gas concentration decreases slightly from 1.99 × 1012 cm-2 at 300 K to 1.7 × 1012 cm-2 at 90 K with a decrease in temperature due to the lower ionization at cryogenic temperature and the nearly constant Δec.