Structure and optoelectrical properties of transparent conductive MGZO films deposited by magnetron sputtering

• 来源期刊: 光电子快报（英文版）
• 年，卷（期）: 2018,（1）
• 页码范围: 25-29
• 页数: 5页
• 语种: 英文
• DOI: 10.1007/s11801-018-7160-8

摘要

The transparent conductive Mg-Ga co-doped ZnO (MGZO) films were prepared by radio-frequency (RF) magnetron sputtering.The influence of substrate temperature on the structural and optoelectrical properties of the films is studied.The results show that all the films possess a preferential orientation along the (002) plane.With the increase of substrate temperature,the structure and optoelectrical properties of the films can be changed.When substrate temperature is 300 ℃,the deposited film exhibits the best crystalline quality and optoelectrical properties,with the minimum micro strain of 1.09×103,the highest average visible transmittance of 82.42％,the lowest resistivity of 1.62× 10-3 Ω·cm and the highest figure of merit of 3.18×103 Ω-1·cm-1.The optical bandgaps of the films are observed to be in the range of 3.342-3.545 eV.The refractive index dispersion curves obey the Sellmeier's dispersion model.