Formation of a monolayer h-BN nanomesh on Rh (111) studied using in-situ STM

• 来源期刊: 中国科学:物理学 力学 天文学（英文版）
• 年，卷（期）: 2018,（7）
• 页码范围: 61-66
• 页数: 6页
• 语种: 英文

摘要

As a member of the 2D family of materials, h-BN is an intrinsic insulator and could be employed as a dielectric or insulating inter-layer in ultra-thin devices. Monolayer h-BN can be synthesized on Rh (111) surfaces using borazine as a precursor. Using in-situ variable-temperature scanning tunneling microscopy (STM), we directly observed the formation of h-BN in real-time. By analyzing the deposition under variable substrate temperatures and the filling rate of the h-BN overlayer vacant hollows during growth, we studied the growth kinetics of how the borazine molecules construct the h-BN overlayer grown on the Rh surface.