Stress damage process of silicon wafer under millisecond laser irradiation
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摘要:
The stress damage process of a single crystal silicon wafer under millisecond laser irradiation is studied by experiments and numerical simulations.The formation process of low-quality surface is monitored in real-time.Stress damage can be observed both in laser-on and-off periods.Plastic deformation is responsible for the first stress damage in the laser-on period.The second stress damage in the laser-off period is a combination of plastic deformation and fracture,where the fundamental cause lies in the residual molten silicon in the ablation hole.