Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2018,（11）
• 页码范围: 70-73
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/35/11/117201

摘要

Ge complementary tunneling field-effect transistors (TFETs) are fabricated with the NiGe metal source/drain (S/D) structure.The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of sufficiently high Schottky barrier heights.As a result,the Ge p-and n-TFETs exhibit decent electrical properties of large ON-state current and steep sub-threshold slope (S factor).Especially,Id of 0.2 μA/μm is revealed at Vg-Vth =Vd =±0.5 V for Ge pTFETs,with the S factor of 28mV/dec at 7K.