Surface plasmon enhanced solar-blind photoresponse of Ga2O3 film with Ga nanospheres

• 来源期刊: 中国科学:物理学 力学 天文学（英文版）
• 年，卷（期）: 2018,（10）
• 页码范围: 96-99
• 页数: 4页
• 语种: 英文

摘要

Semiconductor solar-blind (220-280nm) photodetectors (PDs),which have important applications both in civil and military aspects,are mainly based on diamond [1],AlGaN [2],MgZnO [3],and Ga2O3 [4-11].Among these materials,Ga2O3 has a direct band gap (～4.9 eV) just falling in solarblind spectral range,which makes Ga2O3 a desirable candidate for solar-blind photodetection.Up to now,many kinds of Ga2O3 PDs have been demonstrated including bulk [4,5],film [6-8] and nanostructures [9-11],as summarized in Table 1.From the summary,we can see although bulk Ga2O3 devices usually have a high photoresponsivity,the dark current is also high [4,5].In addition,the growth process of bulk material is complex and the cost is expensive,which is not favored in terms of industrialization.Great progresses have been achieved in the devices based on high-quality singlecrystal Ga2O3 films [7,8].However,the expensive cost and demand for high temperature synthesis techniques significantly restrict the industrial development of large-area films.