Preparation and Some Properties of Metal Organic Chemical Vapour Deposited Al-Doped ZnO Thin Films Using Single Solid Precursors

• 作者: Adetokunbo Temitope Famojuro Ezekiel Oladele Bolarinwa Ajayi Johnson Ayodele O. Ogundeji Olakunle A. Akinwumi Olatomide G. Fadodun Olumide Oluwole Akinwunmi Olusoji O. Ilori
• 来源期刊: 现代物理(英文)
• 学科: 化学
• 关键词: ZnO Thin Film ZNO:AL MOCVD Optical PROPERTIES AAA ZAD Electrical PROPERTIES FESEM UV-VIS OPTOELECTRONIC PROPERTIES
• 年，卷（期）: 2018,（11）
• 页码范围: 2073-2089
• 页数: 17页
• 分类号: O6

摘要

Zinc Oxide (ZnO) and Aluminium doped ZnO (AZO) thin films were deposited on soda lime glass by Metal Organic Chemical Vapour deposition technique (MOCVD), using prepared compound mixtures of Zinc Acetate di-hydrate (Zn(CH3COO)2⋅2H2O;ZAD) and Aluminium Acetyl-Acetonate (Al(C5H702)3;AAA) precursors at a temperature of 420°C. Effects of the varying mole percent concentrations of AAA precursor additives on the Al dopant concentrations in ZnO were systematically studied. The observations were made via investigations carried out on the morphological, optical, electrical and compositional properties of the deposited thin films. The thin films morphology was found to be strongly dependent on the varying concentration of AAA in the precursor mixtures. The average optical transmittance of the thin films in the uv-visible region was over 85% except 5 mol.% Al. While the energy band gaps were found to be in range of 3.27 - 3.36 eV. There is a blue-shift of the energy band edge observed between 0 and 5 mol.% AAA, which may be due to Burstein-Moss’ band gap widening effect and an opposing band gap renormalization effect at 10 mol.% AAA along with an extra band gap stabilization effect (Roth’s effect) at 15 mol.% AAA in rather quasi-sinusoidal or anomalous behaviour. The optical transmittance and electrical conductivity of ZnO were enhanced with addition of Al dopants. The RBS confirm the presence of Al, Zn and O, and evidence that Al dopants were successfully incorporated into the ZnO.