Carrier-Induced Magnetic Solitons and Metal-Insulator Transition in Diluted Magnetic Semiconductors Ga<sub>1-x</sub>Mn<sub>x</sub>As

• 作者: I. Kanazawa R. Maeda S. Nakamura
• 来源期刊: 现代物理(英文)
• 学科: 物理学
• 关键词: DILUTED MAGNETIC Semiconductor MAGNETIC Soliton METAL-INSULATOR Transition Localization
• 年，卷（期）: 2018,（14）
• 页码范围: 2437-2442
• 页数: 6页
• 分类号: O48

摘要

We discuss hole-induced magnetic solitons and metal-insulator transition of transport properties in diluted magnetic semiconductors Ga1-xMnxAs from the standpoint of a field theoretical formulation, and analyze experimental data of transport properties, using the supersymmetry sigma formula and the effective Lagrangian of diffusion model.