Effects of Substrate Temperature on Properties of Transparent Conductive Ta-Doped TiO2 Films Deposited by Radio-Frequency Magnetron Sputtering

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2018,（4）
• 页码范围: 113-117
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/0256-307X/35/4/048101

摘要

Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures.After post-annealing at 550℃ in a vacuum,all the films are crystallized into the polycrystalline anatase TiO2 structure.The effects of substrate temperature from room temperature up to 350℃ on the structure,morphology,and photoelectric properties of Ta-doped titanium dioxide films are analyzed.The average transmittance in the visible region (400-800nm) of all films is more than 73％.The resistivity decreases firstly and then increases moderately with the increasing substrate temperature.The polycrystalline film deposited at 150℃ exhibits a lowest resistivity of 7.7 × 10-4 Ω.cm with the highest carrier density of 1.1 × 1021 cm-3 and the Hall mobility of 7.4cm2 · V-1 S-1.