Characteristics of Sb6Te4/VO2 Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2018,（9）
• 页码范围: 53-56
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/35/9/096801

摘要

The Sb6Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail.Compared with Sb6Te4,Sb6Te4/VO2 multilayer composite thin films have higher phase change temperature and crystallization resistance,indicating better thermal stability and less power consumption.Also,Sb6Te4/VO2 has a broader energy band of 1.58 e V and better data retention (125℃ for 10 y).The crystallization is suppressed by the multilayer interfaces in Sb6Te4/VO2 thin film with a smaller rms surface roughness for Sb6Te4/VO2 than monolayer Sb4Te6.The picosecond laser technology is applied to study the phase change speed.A short crystallization time of 5.21 ns is realized for the Sb6Te4 (2 nm)/VO2 (8 nm) thin film.The Sb6Te4/VO2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed.