A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design

• 来源期刊: 中国物理B（英文版）
• 关键词: reverse-conducting lateral insulated-gate bipolar transistor (RC-LIGBT) breakdown voltage snapback phenomenon
• 年，卷（期）: 2018,（8）
• 页码范围: 637-642
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/8/088501

摘要

A reverse-conducting lateral insulated-gate bipolar transistor (RC-LIGBT) with a trench oxide layer (TOL), featuring a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surface and bulk electric fields of the N-drift region, thus the breakdown voltage (BV) is improved. Secondly, the vertical N-buffer layer increases the voltage drop VPN of the P-collector/N-buffer junction, thus the snapback is suppressed. Thirdly, the P-body and the vertical N-buffer act as the anode and the cathode, respectively, to conduct the reverse current, thus the inner diode is integrated. As shown by the simulation results, the proposed RC-LIGBT exhibits trapezoidal electric field distribution with BV of 342.4 V, which is increased by nearly 340％compared to the conventional RC-LIGBT with triangular electric fields of 100.2 V. Moreover, the snapback is eliminated by the vertical N-buffer layer design, thus the reliability of the device is improved.