1.3-μm InAs/GaAs quantum dots grown on Si substrates

• 来源期刊: 中国物理B（英文版）
• 关键词: quantum dots dislocation filter molecular beam epitaxy (MBE) silicon photonics
• 年，卷（期）: 2018,（12）
• 页码范围: 601-607
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/12/128105

摘要

We compare the effect of InGaAs/GaAs strained-layer superlattice (SLS) with that of GaAs thick buffer layer (TBL) serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL in blocking the propagation of threading dislocations, which are generated at the interface between the GaAs buffer layer and the Si substrate. Through testing and analysis, we conclude that the weaker photoluminescence for quantum dots (QDs) on Si substrate is caused by the quality of capping In0.15Ga0.85As and upper GaAs. We also find that the periodic misfits at the interface are related to the initial stress release of GaAs islands, which guarantees that the upper layers are stress-free.