Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs

• 来源期刊: 中国物理B（英文版）
• 关键词: proton irradiation InP-based HEMTs InAlAs/InGaAs hetero-junction incident angle
• 年，卷（期）: 2018,（2）
• 页码范围: 625-629
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/2/028502

摘要

InP-based high electron mobility transistors (HEMTs) will be affected by protons from different directions in space radiation applications.The proton irradiation effects on InAlAs/InGaAs hetero-junction structures of InP-based HEMTs are studied at incident angles ranging from 0 to 89.9° by SRIM software.With the increase of proton incident angle,the change trend of induced vacancy defects in the InAlAs/InGaAs hetero-junction region is consistent with the vacancy energy loss trend of incident protons.Namely,they both have shown an initial increase,followed by a decrease after incident angle has reached 30°.Besides,the average range and ultimate stopping positions of incident protons shift gradually from buffer layer to hetero-junction region,and then go up to gate metal.Finally,the electrical characteristics of InP-based HEMTs are investigated after proton irradiation at different incident angles by Sentaurus-TCAD.The induced vacancy defects are considered self-consistently through solving Poisson's and current continuity equations.Consequently,the extrinsic transconductance,pinch-off voltage and channel current demonstrate the most serious degradation at the incident angle of 30°,which can be accounted for the most severe carrier sheet density reduction under this condition.