Investigation of flux dependent sensitivity on single event effect in memory devices

• 来源期刊: 中国物理B（英文版）
• 关键词: ion flux single event effect GEANT4 simulation memory device
• 年，卷（期）: 2018,（7）
• 页码范围: 461-468
• 页数: 8页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/7/076101

摘要

Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer (LET) of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device.