Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers

• 来源期刊: 中国物理B（英文版）
• 关键词: lighting-emitting diode gallium nitride efficiency droop triangular barrier
• 年，卷（期）: 2018,（8）
• 页码范围: 48-52
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/8/088504

摘要

In this study, an InGaN lighting-emitting diode (LED) containing GaN/AlGaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or AlGaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.