Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires

• 来源期刊: 中国物理B（英文版）
• 关键词: GaInAsSb nanowire quaternary alloy near-infrared photodetector
• 年，卷（期）: 2018,（7）
• 页码范围: 621-626
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/7/078101

摘要

Bandgap engineering of semiconductor nanomaterials is critical for their applications in nanoelectronics, opto-electronics, and photonics. Here we report, for the first time, the growth of single-crystalline quaternary alloyed Ga0.75In0.25As0.49Sb0.51 nanowires via a chemical-vapor-deposition method. The synthesized nanowires have a uniform composition distribution along the growth direction, with a zinc-blende structure. In the photoluminescence investigation, these quaternary alloyed semiconductor nanowires show a strong band edge light emission at 1950 nm (0.636 eV). Photode-tectors based on these alloy nanowires show a strong light response in the near-infrared region (980 nm) with the external quantum efficiency of 2.0 × 104％and the responsivity of 158 A/W. These novel near-infrared photodetectors may find promising applications in integrated infrared photodetection, information communication, and processing.