Realizing high photovoltage for inverted planar heterojunction perovskite solar cells

• 来源期刊: 中国科学:化学（英文版）
• 年，卷（期）: 2019,（1）
• 页码范围: 1-2
• 页数: 2页
• 语种: 英文

摘要

Inverted planar heterojunction perovskite solar cells (peroSCs) have caused tremendous attention due to their promise features of easy fabrication and compatibility with flexible substrates [1].However,their power conversion efficiencies (PCE) are greatly limited by its relatively low open-circuit voltage (Voc),which is attributed to high nonradiative recombination losses owing to the existence of high density of defects or recombination centers both inside the perovskite bulk material and at the interfacial contacts.Although,various approaches,such as increasing grain size,interface passivation,ion compensation and heterojunction engineering,were carried out to suppress non-radiative recombination,the maximum Voc of inverted pero-SCs still could not exceed 1.15 V [2].Therefore,it is highly desirable to develop a more effective method for addressing this issue without sacrificing other device parameters (e.g.photocurrent).