Giant non-linear susceptibility of hydrogenic donors in silicon and germanium

• 来源期刊: 光：科学与应用（英文版）
• 年，卷（期）: 2019,（4）
• 页码范围: 558-564
• 页数: 7页
• 语种: 英文

摘要

Implicit summation is a technique for the conversion of sums over intermediate states in multiphoton absorption and the high-order susceptibility in hydrogen into simple integrals.Here,we derive the equivalent technique for hydrogenic impurities in multi-valley semiconductors.While the absorption has useful applications,it is primarily a loss process;conversely,the non-linear susceptibility is a crucial parameter for active photonic devices.For Si∶P,we predict the hyperpolarizability ranges from X(3)/n3D =2.9 to 580 × 10-38 m5/V2 depending on the frequency,even while avoiding resonance.Using samples of a reasonable density,n3D,and thickness,L,to produce third-harmonic generation at 9THz,a frequency that is difficult to produce with existing solid-state sources,we predict that X(3) should exceed that of bulk InSb and X(3)L should exceed that of graphene and resonantly enhanced quantum wells.