Effective passivation of black phosphorus transistor against ambient degradation by an ultra-thin tin oxide film

• 来源期刊: 科学通报（英文版）
• 年，卷（期）: 2019,（9）
• 页码范围: 570-574
• 页数: 5页
• 语种: 英文

摘要

Recently,two-dimensional (2D) layered semiconducting materials have been considered as promising channel materials to construct aggressively-scaled transistors owing to their excellent electrostatics and remained high carrier mobility even at atomic thickness [1,2].Among all of the emerging 2D semiconductors,black phosphorus (BP) exhibits high comprehensive electrical properties if considering both of band-gap and carrier mobility [3-7].Specifically,BP presents higher room temperature carrier mobility (approximately 1,000 cm2 v-1 s-1) than transition metal sulfides (TMDs),and a larger band gap (from 0.3 to 1.5 eV) than graphene,as well as a relative good stability in air [8].In addition,layered BP is anisotropic in the plane and has different properties in the armchair and zigzag direction [9,10],which potentially bring some additional advantages in devices.