Spin-Dependent Electron Tunneling in ZnSe/Zn1-xMnxSe Heterostructures with Double δ-Potentials

• 来源期刊: 理论物理通讯（英文版）
• 年，卷（期）: 2019,（3）
• 页码范围: 339-343
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/0253-6102/71/3/339

摘要

Using the matrix method,spin-dependent tunneling properties such as barrier transparency,the degree of resonance polarization,and tunneling lifetime of electrons are examined in the non-magnetic/diluted magnetic semiconductor heterostructure.The effects of the double δ-potential and the magnetic field are discussed on the transport properties of the electrons.The introduction of double δ-potential shifts the resonance peak of polarization to the higher energy value.Both height and position of the δ-potential influence the degree of resonance polarization in the considered heterostructure.The increasing magnetic field enhances the spin-polarization.