Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

• 来源期刊: 中国物理B（英文版）
• 关键词: photodetector ultraviolet oxide semiconductor film
• 年，卷（期）: 2019,（4）
• 页码范围: 7-17
• 页数: 11页
• 语种: 英文
• DOI: 10.1088/1674-1056/28/4/048503

摘要

Ultraviolet (UV) photodetectors have attracted more and more attention due to their great potential applications in missile tracking,flame detecting,pollution monitoring,ozone layer monitoring,and so on.Owing to the special characteristics of large bandgap,solution processable,low cost,environmentally friendly,etc.,wide bandgap oxide semiconductor materials,such as ZnO,ZnMgO,Ga2O3,TiO2,and NiO,have gradually become a series of star materials in the field of semiconductor UV detection.In this paper,a review is presented on the development of UV photodetectors based on wide bandgap oxide semiconductor films.