Full-Quantum Simulation of Graphene Self-Switching Diodes

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2019,（6）
• 页码范围: 53-56
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/36/6/067202

摘要

We present a quantum study on the electrical behavior of the self-switching diode (SSD).Our simulation is based on non-equilibrium Green's function formalism along with an atomistic tight-binding model.Using this method,electrical characteristics of devices,such as turn-on voltage,rectification ratio,and differential resistance,are investigated.Also,the effects of geometrical variations on the electrical parameters of SSDs are simulated.The carrier distribution inside the nano-channel is successfully simulated in a two-dimensional model under zero,reverse,and forward bias conditions.The results indicate that the turn-on voltage,rectification ratio,and differential resistance can be optimized by choosing appropriate geometrical parameters.