Metallic interface induced by electronic reconstruction in crystalline-amorphous bilayer oxide films

• 来源期刊: 科学通报（英文版）
• 年，卷（期）: 2019,（21）
• 页码范围: 1567-1572
• 页数: 6页
• 语种: 英文

摘要

Extraordinary electronic properties can emerge at the interfaces between metal oxides [1-10].Interfacial behaviors have enabled a wide range of applications from electronic communication,energy conversion and storage,to data processing and memory.In recent years,unprecedented progress has been made in exploring and exploiting the emergent and/or enhanced properties of these interfaces,and it is becoming clear that interface engineering provides a new opportunity for advanced devices in the near future.The capability of using interfaces to manipulate material properties offers an effective means to achieve intriguing phenomena.Examples include the interfacial superconductivity in engineered oxide thin films [3A,11,12],and a high-mobility electron (hole) gas at the interface between two insulating oxides such as LaAlO3 (LAO) and SrTiO3 (STO) [1.13-16].The formation of highly conducting or even superconducting interfaces between two insulating materials opens a new route for the development of high-performance platforms such as transparent conducting oxide (TCO) films,which represents an ideal model system for electronic and optoelectronic applications [5].