Efficient passivation of monolayer MoS2 by epitaxially grown 2D organic crystals

• 来源期刊: 科学通报（英文版）
• 年，卷（期）: 2019,（22）
• 页码范围: 1700-1706
• 页数: 7页
• 语种: 英文

摘要

Monolayer molybdenum disulfide (MoS2) is considered to be a promising candidate for field-effect transistors and photodetectors due to its direct bandgap and atomically thin properties.However,the MoS2 devices are impeded by the intrinsic surface defects and environmental adsorption such as H2O and O2.Here,we demonstrated a highly ordered,ultrathin (＜5 nm) and scalable N,N'-ditridecylperylene-3,4,9,10tetracarboxylic diimide (PTCDI-C1 3) passivation layer that can be epitaxially grown on MoS2.The van der Waals interface between PTCDI-C13 and MoS2 can efficiently reduce the surface traps and isolate MoS2 from ambient.As a result,the passivated devices exhibit huge improvement in both carrier mobility (from 0.5 to 8.3 cm2/(V s)) and sub-threshold swing (from 16.7 to 1.6 V/dec).Also,the photodetector made on MoS2 after passivation has a much faster response speed (from 3 s to 10 ms) without significant sacrifice of the responsivity.Our method provides a facile approach to realize high-performance two-dimensional electronic and optoelectronic devices.