High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application

• 来源期刊: 中国物理B（英文版）
• 关键词: GeSn alloy molecular beam epitaxy photodetector cycle annealing
• 年，卷（期）: 2019,（12）
• 页码范围: 410-415
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/ab4e84

摘要

An investigation of germanium-tin (GeSn) on silicon p-i-n photodetectors with a high-quality Ge0.94Sn0.06 absorbing layer is reported.The GeSn photodetector reached a responsivity as high as 0.45 A/W at the wavelength of 1550 nm and 0.12 A/W at the wavelength of 2 μm.A cycle annealing technology was applied to improve the quality of the epitaxial layer during the growth process by molecular beam epitaxy.A low dark-current density under 1 V reverse bias about 0.078 A/cm2 was achieved at room temperature.Furthermore,the GeSn photodetector could detect a wide spectrum region and the cutoff wavelength reached to about 2.3 μm.This work has great importance in silicon-based short-wave infrared detection.